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GATE Physics 2013 Paper

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Question : 20

Total: 55

A phosphorous doped silicon semiconductor ( doping density: 1017∕cm3) is heated from 100°C to 200°C. Which one of the following statements is CORRECT ?

Position of Fermi level moves towards conduction band
Position of dopant level moves towards conduction band
Position of Fermi level moves towards middle of energy gap
Position of dopant level moves towards middle of energy gap

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